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SSM6L11TU
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
SSM6L11TU
High Speed Switching Applications
* * Optimum for high-density mounting in small packages Low on-resistance Q1: Ron = 395m (max) (@VGS = 1.8 V) Q2: Ron = 430m (max) (@VGS = -2.5 V)
2.10.1 1.70.1 0.65 0.65 +0.1 0.3-0.05
Unit
Unit: mm
Q1 Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP Rating 20 12 0.5 1.5
2.00.1
1.30.1
V V A
1 2 3
6 5 4
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse
Symbol VDS VGSS ID IDP
Rating -20 12 -0.5 -1.5
Unit V V A
0.70.05
Q2 Absolute Maximum Ratings (Ta = 25C)
UF6
1.Source1 2.Gate1 3.Drain2
4.Source2 5.Gate2 6.Drain1 2-2T1B
(Ta = 25C)
Absolute Maximum Ratings (Q1,Q2 Common)
Characteristics Drain power dissipation Channel temperature Storage temperature range Symbol PD
(Note 1)
JEDEC
Unit mW C C
Rating 500 150 -55~150
JEITA TOSHIBA
Weight: 7.0 mg (typ.)
Tch Tstg
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. (total dissipation) 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm )
Note:
Marking
6 5 4
Equivalent Circuit (top view)
6 5 4
K8
1 2 3 1
Q1 Q2
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
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+0.06 0.16-0.05
SSM6L11TU
Q1 Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth Yfs Test Condition VGS = 12V, VDS = 0 ID = 1 mA, VGS = 0 ID = 1 mA, VGS = -12 V VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 0.25 A ID = 0.25 A, VGS = 4.0 V Drain-Source on-resistance RDS (ON) ID = 0.25 A, VGS = 2.5 V ID = 0.25 A, VGS = 1.8 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, ID = 0.25 A, VGS = 0~2.5 V, RG = 4.7 (Note2) (Note2) (Note2) (Note2) Min 20 10 0.5 1.2 Typ. 2.4 125 150 200 268 34 44 11 15 Max 1 1 1.1 145 190 395 pF pF pF ns m Unit A V A V S
Note2:
Pulse test
Switching Time Test Circuit
(a) Test Circuit
2.5 V 0 10 s VDD = 10 V RG = 4.7 D.U. < 1% = VIN: tr, tf < 5 ns Common Source Ta = 25C OUT IN 0V RG 10%
(b) VIN
2.5 V 90%
VDD
(c) VOUT
VDD
10% 90% tr ton tf toff
VDS (ON)
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID=100 A for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration when using the device.
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SSM6L11TU
Q2 Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source on-resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth Yfs RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = 12V, VDS = 0 ID = -1 mA, VGS = 0 ID = -1 mA, VGS = +12 V VDS = -20 V, VGS = 0 VDS = -3 V, ID = -0.1 mA VDS = -3 V, ID = -0.25 A ID = -0.25 A, VGS = -4 V ID = -0.25 A, VGS = -2.5 V (Note3) (Note3) (Note3) Min -20 -8 -0.5 0.65 Typ. 1.3 210 310 218 42 52 16 15 Max 1 -1 -1.1 260 430 Unit A V A V S m pF pF pF ns
VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDD = -10 V, ID = -0.25 A, VGS = 0~-2.5 V, RG = 4.7
Note3:
Pulse test
Switching Time Test Circuit
(a) Test circuit
0 IN RG RL VDD -2.5 V 90%
OUT
(b) VIN
0V
10%
-2.5V
10 s
(c) VOUT
VDS (ON)
90% 10% tr ton toff tf
VDD = -10 V RG = 4.7 D.U. < 1% = VIN: tr, tf < 5 ns Common Source Ta = 25C
VDD
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID=-100 A for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration when using the device.
.
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SSM6L11TU
Q1(Nch MOS FET)
ID - VDS
1600 1400 Drain current ID (mA) 1200 1000 800 600 400 200 0 0 0.2 0.4 0.6 0.8 1 Drain-Source voltage VDS (V)
ID - VGS 10000 1.6 Drain current ID (mA) 1000 100 Ta=100C 10 1 0.1 0.01 0 1 2 Gate-Source voltage VGS (V) 3 25C -25C Common Source VDS=3V
1.8
2.0 3.0 4.0 5.0
VGS=1.4V
Common Source Ta=25C
200 180 Drain-Source on resistance RDS(ON) (m) 160 140 120 100 80 60 40 20 0 0 200
RDS(ON) - ID 1.8V
Drain-Source on resistance RDS(ON) (m)
RDS(ON) - VGS
400 350 300 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 Gate-Source voltage VGS (V) 10
Common Source ID=250mA
2.5V
VGS=4V
25C Ta=100C -25C
Common Source Ta=25C
400 600 800 1000 1200 1400 1600 Drain current ID (mA)
400 350 Drain-Source on resistance RDS(ON) (m) 300 250 200 150 100 50
RDS(ON) - Ta Common Source ID=250mA
Gate threshold voltage Vth(V)
1
Vth - Ta Common Source ID=0.1mA VDS=3V
0.8
1.8V 2.5V VGS=4V
0.6
0.4
0.2
0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C)
0 -60 -40 -20 0
20 40 60 80 100 120 140 160
Ambient temperature Ta (C)
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SSM6L11TU
Q1(Nch MOS FET)
10
|Yfs| - ID
1600 Drain reverse current IDR (mA) 1400 1200 1000 800
S
IDR - VDS Common Source VGS=0V Ta=25C
D
Forward transfer admittance |Yfs| (S)
25C -25C
1
Ta=100C
G
IDR
600 400 200 0
Common Source VDS=3V Ta=25C
0 10 100 1000 10000 Drain current ID (mA)
0
-0.2 -0.4 -0.6 -0.8 Drain-Source voltage VDS (V)
-1
1000
C - VDS
1000
t - ID Common Source VDD=10V VGS=0~2.5V Ta=25C
Capacitance C (pF)
Switching time t (ns)
Ciss
toff
100
100
tf ton tr
Common Source VGS=0V f=1MHz Ta=25C 10 0.1
Coss Crss
10
1 1 10 Drain-Source voltage VDS (V) 100 10 100 1000 Drain current ID (mA) 10000
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SSM6L11TU
Q2(Pch MOS FET)
ID - VDS
-1600 -1400 Drain current ID (mA) -1200 -1000 -800 -600 -400 -200 0 0 -0.2 -0.4 -0.6 -0.8 -1 Drain-Source voltage VDS (V)
ID - VGS -10000
-5.0
-3.0 -2.0 -4.0 -1.8 Drain current ID (mA)
- 1000 -100 - 10 -1 - 0.1 - 0.01 0 -1 -2 Gate-Source voltage VGS (V) -3 Ta=100C 25 -25C Common Source VDS=-3V
VGS=-1.6 Common Source Ta=25C
500
RDS(ON) - ID
RDS(ON) - VGS
500
Common Source ID=-250mA
Drain-Source on resistance RDS(ON) (m) 400
Drain-Source on resistance RDS(ON) (m)
400
300
-2.5V
300
200
VGS=-4V
200
Ta=100C 25C -25C
100
100
0
0 -200 -400 -600 -800
Common Source Ta=25C
-1000 -1200 -1400 -1600
0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 Gate-Source voltage VGS (V)
Drain current ID (mA)
500
RDS(ON) - Ta Common Source ID=-250mA
-1
Vth - Ta
Drain-Source on resistance RDS(ON) (m)
400
-2.5V
Gate threshold voltage Vth(V)
-0.8
300
-0.6
VGS=-4V
200
-0.4
100
-0.2
Common Source ID=-0.1mA VDS=-3V
20 40 60 80 100 120 140 160 Ambient temperature Ta (C)
0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C)
0 -60 -40 -20 0
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SSM6L11TU
Q2(Pch MOS FET)
10
|Yfs| - ID
1600 Drain reverse current IDR (mA) 1400 1200 1000 800 600 400 200 0 -100 -1000 -10000 0.0 0.2 Drain current ID (mA)
IDR - VDS Common Source VGS=0V Ta=25C
Forward transfer admittance |Yfs| (S)
25C
1
-25C Ta=100C
Common Source VDS=-3V Ta=25C
0 -10
0.4 0.6 0.8 Drain-Source voltage VDS (V)
1.0
1000
C - VDS
1000
t - ID Common Source VDD=-10V VGS=0~-2.5V Ta=25C
Capacitance C (pF)
Ciss
100
Switching time t (ns)
toff
100
tf ton tr
Common Source VGS=0V f=1MHz Ta=25C 10 -0
Coss Crss
10
-1 -10 Drain-Source voltage VDS (V)
-100
1 -10
-100 -1000 Drain current ID (mA)
-10000
PD* - Ta
1000 t=10s mounted FR4 board (25.4mm*25.4mm*1.6t Cu Pad :645mm2)
Drain power dissipation PD* (mW)
800
600
DC
400
200
0 0 20
*:Total Rating
40 60 80 100 120 140 Ambient temperature Ta( )
160
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SSM6L11TU
rth - tw rth (C/W )
1000 Single pulse Mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm )
Transient thermal impedance
100
10
1 0.001
0.01
0.1
1
10
100
1000
Pulse width
tw
(s)
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2007-11-01
SSM6L11TU
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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